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[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Study on the improved short-circuit behavior of narrow mesa Si-IGBTs with emitter connected trenches
Eikyu, K., Sakai, A., Matsuura, H., Nakazawa, Y., Akiyama, Y., Yamaguchi, Y.Year:
2018
Language:
english
DOI:
10.1109/ISPSD.2018.8393711
File:
PDF, 1.52 MB
english, 2018