[IEEE 2018 IEEE 30th International Symposium on Power...

  • Main
  • [IEEE 2018 IEEE 30th International...

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Investigation of the mechanism of gate voltage oscillation in 1.2kV IGBT under short circuit condition

Kikuchi, Takuo, Nakamura, Kazutoshi, Takao, Kazuto
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2018
Language:
english
DOI:
10.1109/ISPSD.2018.8393713
File:
PDF, 1.74 MB
english, 2018
Conversion to is in progress
Conversion to is failed