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[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - A high-speed SOI-LIGBT with electric potential modulation trench and low-doped buried layer
Li, Shaohong, Zhang, Long, Zhu, Jing, Sun, Weifeng, Tang, Qingxi, Wang, Hao, Sun, Ling, Gu, Yan, Cheng, Shikang, Zhang, Sen, Yi, YangboYear:
2018
Language:
english
DOI:
10.1109/ispsd.2018.8393668
File:
PDF, 1.35 MB
english, 2018