Elevated-temperature etching of gallium nitride (GaN) in...

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Vacuum 2018 / 7

Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH 4 /H 2 at 300–500 °C

Kako, Takashi, Liu, Zecheng, Ishikawa, Kenji, Kondo, Hiroki, Oda, Osamu, Sekine, Makoto, Hori, Masaru
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Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2018.07.040
Date:
July, 2018
File:
PDF, 2.39 MB
english, 2018
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