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[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - A 600V high-side gate drive circuit with ultra-low propagation delay for enhancement mode GaN devices
Lu, Yangyang, Zhu, Jing, Sun, Weifeng, Zhang, Yunwu, Hu, Kongsheng, Yu, Zhicheng, Leng, Jing, Cheng, Shikang, Zhang, SenYear:
2018
Language:
english
DOI:
10.1109/ISPSD.2018.8393607
File:
PDF, 890 KB
english, 2018