High Endurance Ferroelectric Hafnium Oxide-Based FeFET...

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IEEE Transactions on Electron Devices 2018

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

Ali, T., Polakowski, P., Riedel, S., Buttner, T., Kampfe, T., Rudolph, M., Patzold, B., Seidel, K., Lohr, D., Hoffmann, R., Czernohorsky, M., Kuhnel, K., Steinke, P., Calvo, J., Zimmermann, K., Muller
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2856818
File:
PDF, 1.75 MB
english, 2018
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