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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
Ali, T., Polakowski, P., Riedel, S., Buttner, T., Kampfe, T., Rudolph, M., Patzold, B., Seidel, K., Lohr, D., Hoffmann, R., Czernohorsky, M., Kuhnel, K., Steinke, P., Calvo, J., Zimmermann, K., MullerYear:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2856818
File:
PDF, 1.75 MB
english, 2018