Ternary Resistive Switching Memory Behavior in Graphene...

Ternary Resistive Switching Memory Behavior in Graphene Oxide Layer

Lu, Junguo, Sun, Yanmei, Wen, Dianzhong
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Volume:
13
Language:
english
Journal:
Nano
DOI:
10.1142/S1793292018500728
Date:
July, 2018
File:
PDF, 625 KB
english, 2018
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