InGaN-channel high-electron-mobility transistor with...

Applied Physics Express 2018 / 09 Vol. 11; Iss. 9

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

Zhang, Yachao, Zhang, Tao, Zhou, Hong, Li, Yao, Xu, Shengrui, Bao, Weimin, Zhang, Jincheng, Hao, Yue
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Volume:
11
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.11.094101
Date:
September, 2018
File:
PDF, 4.25 MB
english, 2018
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