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[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Characterization of GaN-HEMT in cascode topology and comparison with state of the art-power devices
Buetow, Sven, Herzer, ReinhardYear:
2018
Language:
english
DOI:
10.1109/ISPSD.2018.8393636
File:
PDF, 1.53 MB
english, 2018