Normally-OFF GaN MIS-HEMT with F-Doped Gate Insulator Using...

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IEEE Journal of the Electron Devices Society 2018

Normally-OFF GaN MIS-HEMT with F-Doped Gate Insulator Using Standard Ion Implantation

Wu, Chia-Hsun, Han, Ping-Cheng, Luc, Quang Ho, Hsu, Ching-Yi, Hsieh, Ting-En, Wang, Huan-Chung, Lin, Yen-Ku, Chang, Po-Chun, Lin, Yueh-Chin, Chang, Edward Yi
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Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2859769
File:
PDF, 909 KB
english, 2018
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