Thermally Grown TiO₂ and Al₂O₃ for GaN-Based MOS-HEMTs

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IEEE Transactions on Electron Devices 2018

Thermally Grown TiO₂ and Al₂O₃ for GaN-Based MOS-HEMTs

Rawat, Akanksha, Meer, Mudassar, Surana, Vivek kumar, Bhardwaj, Navneet, Pendem, Vikas, Garigapati, Navya Sri, Yadav, Yogendra, Ganguly, Swaroop, Saha, Dipankar
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2857468
File:
PDF, 4.40 MB
english, 2018
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