Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells
Al tahtamouni, T. M., Li, J., Lin, J. Y., Jiang, H. X.Volume:
6
Language:
english
Journal:
Optical Materials Express
DOI:
10.1364/ome.6.003476
Date:
November, 2016
File:
PDF, 1.74 MB
english, 2016