Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates
El Gmili, Y., Bonanno, P. L., Sundaram, S., Li, X., Puybaret, R., Patriarche, G., Pradalier, C., Decobert, J., Voss, P. L., Salvestrini, J-P., Ougazzaden, A.Volume:
7
Language:
english
Journal:
Optical Materials Express
DOI:
10.1364/ome.7.000376
Date:
February, 2017
File:
PDF, 3.96 MB
english, 2017