[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system
Mouawad, Bassem, Skuriat, Robert, Li, Jianfeng, Johnson, C. Mark, DiMarino, ChristinaYear:
2018
Language:
english
DOI:
10.1109/ispsd.2018.8393651
File:
PDF, 1.50 MB
english, 2018