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Nucleation of SiC nanocrystals at the Si/SiO 2 interface: Effect of the interface properties
Pongrácz, A., Battistig, G., Tóth, A. L., Makkai, Zs., Dücső, Cs., Josepovits, K. V., Bársony, I.Volume:
132
Language:
english
Journal:
Journal de Physique IV (Proceedings)
DOI:
10.1051/jp4:2006132026
Date:
March, 2006
File:
PDF, 198 KB
english, 2006