[IEEE 2018 IEEE 30th International Symposium on Power...

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[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Analysis of short-circuit break-down point in 3.3 kV SiC-MOSFETs

Tani, Kazuki, Sakano, Jun-ichi, Shima, Akio
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Year:
2018
Language:
english
DOI:
10.1109/ispsd.2018.8393683
File:
PDF, 751 KB
english, 2018
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