Vertical leakage mechanism in GaN on Si high electron...

Journal of Applied Physics 2018 / 08 Vol. 124; Iss. 5

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Choi, F. S., Griffiths, J. T., Ren, Chris, Lee, K. B., Zaidi, Z. H., Houston, P. A., Guiney, I., Humphreys, C. J., Oliver, R. A., Wallis, D. J.
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Volume:
124
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5027680
Date:
August, 2018
File:
PDF, 3.64 MB
english, 2018
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