Mechanism of SiO x particles formation during CVD graphene...

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Carbon 2018 / 8

Mechanism of SiO x particles formation during CVD graphene growth on Cu substrates

Ge, Xiaoming, Zhang, Yanhui, Chen, Lingxiu, Zheng, Yonghui, Chen, Zhiying, Liang, Yijian, Hu, Shike, Li, Jing, Sui, Yanping, Yu, Guanghui, Jin, Zhi, Liu, Xinyu
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Language:
english
Journal:
Carbon
DOI:
10.1016/j.carbon.2018.08.007
Date:
August, 2018
File:
PDF, 7.82 MB
english, 2018
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