Concept and method to create a distinct low-temperature region in a Si melt for growth of a Si single ingot with a large diameter ratio using the noncontact crucible method
Nakajima, Kazuo, Ono, Satoshi, Itoh, HarumasaVolume:
499
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.07.031
Date:
October, 2018
File:
PDF, 1.24 MB
english, 2018