Ultra-Low defect density at sub-0.5 nm HfO2/SiGe interfaces...

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ACS Applied Materials & Interfaces 2018 / 08

Ultra-Low defect density at sub-0.5 nm HfO2/SiGe interfaces via selective oxygen scavenging

Kavrik, Mahmut S., Thomson, Emily, Chagarov, Evgueni, Tang, Kechao, Ueda, Scott T., Hou, Vincent, Aoki, Toshihiro, Kim, Moon J., Fruhberger, Bernd, Taur, Yuan, McIntyre, Paul C, Kummel, Andrew C.
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Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.8b06547
Date:
August, 2018
File:
PDF, 1.42 MB
english, 2018
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