![](/img/cover-not-exists.png)
Obtaining low resistivity (∼100 μ Ω cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
Krylov, Igor, Zoubenko, Ekaterina, Weinfeld, Kamira, Kauffmann, Yaron, Xu, Xianbin, Ritter, Dan, Eizenberg, MosheVolume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology A
DOI:
10.1116/1.5035422
Date:
September, 2018
File:
PDF, 4.16 MB
english, 2018