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Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors
Lei, Y.M., Wakabayashi, H., Tsutsui, K., Iwai, H., Furuhashi, M., Tomohisa, S., Yamakawa, S., Kakushima, K.Volume:
84
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.03.037
Date:
May, 2018
File:
PDF, 928 KB
english, 2018