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Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]
Usman, Muhammad, Saba, Kiran, Han, Dong-Pyo, Muhammad, Nazeer, Farwa, Shabieh, Rafiq, Muhammad, Saba, TanzilaVolume:
8
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.5030116
Date:
March, 2018
File:
PDF, 270 KB
english, 2018