Degradation behavior of AlGaN-based 233 nm deep-ultraviolet...

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Semiconductor Science and Technology 2018 / 08

Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes

Glaab, Johannes, Ruschel, Jan, Mehnke, Frank, Lapeyrade, Mickael, Gutmann, Martin, Wernicke, Tim, Weyers, Markus, Einfeldt, Sven, Kneissl, Michael
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aad765
Date:
August, 2018
File:
PDF, 813 KB
english, 2018
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