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TCAD Modeling of a 1200 V SiC MOSFET
Lee, K., Buono, Benedetto, Domeij, Martin, Franchi, JimmyVolume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.689
Date:
June, 2018
File:
PDF, 2.52 MB
english, 2018