TSV Transistor – vertical metal gate FET inside a Through...

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IEEE Electron Device Letters 2018

TSV Transistor – vertical metal gate FET inside a Through Silicon VIA

Winkler, Felix, Killge, Sebastian, Fischer, Dustin, Richter, Karola, Hiess, Andre, Bartha, Johann W.
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2864621
File:
PDF, 1.64 MB
english, 2018
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