![](/img/cover-not-exists.png)
Photosensitive polysiloxane passivation fabricated at low temperature for highly reliable amorphous InGaZnO thin-film transistors
Yoshida, Naofumi, Bermundo, Juan Paolo, Ishikawa, Yasuaki, Nonaka, Toshiaki, Uraoka, YukiharuVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.090306
Date:
September, 2018
File:
PDF, 1.03 MB
english, 2018