![](/img/cover-not-exists.png)
Improving electrical properties of InAs nanowire field effect transistors by covering Y2O3/HfO2 layers
Li, Tong, Shen, Rui, Sun, Mei, Pan, Dong, Zhang, Jingmin, Xu, Jun, Zhao, Jianhua, Chen, QingYear:
2018
Language:
english
Journal:
Nanoscale
DOI:
10.1039/C8NR05680C
File:
PDF, 1.90 MB
english, 2018