Optoelectronic properties of bottom gate-defined in-plane...

Chinese Physics B 2018 / 08 Vol. 27; Iss. 8

Optoelectronic properties of bottom gate-defined in-plane monolayer WSe 2 p–n junction

Liu, Di, Qi, Xiao-Zhuo, Taniguchi, Takashi, Ren, Xi-Feng, Guo, Guo-Ping
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Volume:
27
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/27/8/087303
Date:
August, 2018
File:
PDF, 2.35 MB
english, 2018
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