Ultralong 1D Vacancy Channels for Rapid Atomic Migration...

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Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS 2

Chen, Qu, Li, Huashan, Zhou, Si, Xu, Wenshuo, Chen, Jun, Sawada, Hidetaka, Allen, Christopher S., Kirkland, Angus I., Grossman, Jeffrey C., Warner, Jamie H.
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Language:
english
Journal:
ACS Nano
DOI:
10.1021/acsnano.8b01610
Date:
August, 2018
File:
PDF, 3.10 MB
english, 2018
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