Growth of SiC Films on Silicon Substrate by Cold...

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Materials Letters 2018 / 8

Growth of SiC Films on Silicon Substrate by Cold Implantation of Carbon Recoil Atoms

Zinenko, V.I., Agafonov Yu, A., Saraykin, V.V., Eremenko, V.G., Roshchupkin, D.V., Sedlovets, D.M.
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Language:
english
Journal:
Materials Letters
DOI:
10.1016/j.matlet.2018.08.107
Date:
August, 2018
File:
PDF, 555 KB
english, 2018
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