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Influence of por-Si sublayer on the features of heteroepitaxial growth and physical properties of In x Ga 1-x N/Si(111) heterostructures with nanocolumn morphology of thin film
Seredin, P.V., Goloshchapov, D.L., Lenshin, А.S., Mizerov, А.М., Zolotukhin, D.S.Volume:
104
Language:
english
Journal:
Physica E: Low-dimensional Systems and Nanostructures
DOI:
10.1016/j.physe.2018.07.024
Date:
October, 2018
File:
PDF, 2.49 MB
english, 2018