Impurity resonant states p-doping layer for high efficiency...

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Semiconductor Science and Technology 2018 / 08

Impurity resonant states p-doping layer for high efficiency nitride Based light-emitting diodes

Wang, Liancheng, Yi, Xiaoyan, liu, zhiqiang, Wei, Tongbo, Yuan, Guodong, YAN, Jianchang, Wang, Junxi, Li, Jinmin, Shi, Yi, Zhang, Yong
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aadc01
Date:
August, 2018
File:
PDF, 1.17 MB
english, 2018
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