Accurate semi empirical predictive model for doped and...

Solid-State Electronics 2018 / 11 Vol. 149

Accurate semi empirical predictive model for doped and undoped double gate MOSFET

Cabré, Roger, Eshetu Muhea, Wondwosen, Iñiguez, Benjamin
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Volume:
149
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2018.08.003
Date:
November, 2018
File:
PDF, 1.37 MB
english, 2018
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