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Degradation induced by hot carrier and cold carrier in 65-nm NMOSFETs with enclosed gate and two-edged gate layouts
Shen, Jingyu, Zhang, Ming, Li, Wei, Fan, Xue, Li, Jianjun, Tan, CanVolume:
13
Language:
english
Journal:
Micro & Nano Letters
DOI:
10.1049/mnl.2017.0850
Date:
August, 2018
File:
PDF, 399 KB
english, 2018