High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains
Zhang, Weihang, Zhang, Jincheng, Xiao, Ming, Zhang, Li, Hao, YueVolume:
6
Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2864720
File:
PDF, 1.44 MB
english, 2018