Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology
RAJAEI, Ramin, ASGARI, Bahar, TABANDEH, Mahmoud, FAZELI, MahdiVolume:
25
Year:
2017
Language:
english
Journal:
TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES
DOI:
10.3906/elk-1502-124
File:
PDF, 6.66 MB
english, 2017