Seamless Interfacial Formation by Solution-Processed...

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ACS Applied Energy Materials 2018 / 08

Seamless Interfacial Formation by Solution-Processed Amorphous Hydroxide Semiconductor for Highly Efficient Electron Transport

Yang, Shuzhang, Song, Xue-Zhi, Gao, Liguo, Wang, ning, Ding, Xiaogang, Wang, Shufeng, Ma, Tingli
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Language:
english
Journal:
ACS Applied Energy Materials
DOI:
10.1021/acsaem.8b00681
Date:
August, 2018
File:
PDF, 1.20 MB
english, 2018
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