Comparison of SiC MOSFET-based and GaN HEMT-based...

IET Power Electronics 2018 / 09 Vol. 11; Iss. 11

Comparison of SiC MOSFET-based and GaN HEMT-based high-efficiency high-power-density 7.2 kW EV battery chargers

Taylor, Allan, Lu, Juncheng, Zhu, Liyan, Bai, Kevin (Hua), McAmmond, Matt, Brown, Alan
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Volume:
11
Language:
english
Journal:
IET Power Electronics
DOI:
10.1049/iet-pel.2017.0467
Date:
September, 2018
File:
PDF, 6.28 MB
english, 2018
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