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Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al₂O₃ and GeOₓ ILs Using Ultrafast Charge Trap-Detrap Techniques
Joishi, Chandan, Ghosh, Sayantan, Kothari, Shraddha, Parihar, Narendra, Mukhopadhyay, Subhadeep, Mahapatra, Souvik, Lodha, SaurabhYear:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2864128
File:
PDF, 2.83 MB
english, 2018