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Device characteristics of Schottky barrier diodes using In-Ga-Zn-O semiconductor thin films with different atomic ratios
Kim, Jae-Won, Jung, Tae-Jun, Yoon, Sung-MinLanguage:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2018.08.289
Date:
August, 2018
File:
PDF, 969 KB
english, 2018