Dopant-induced modifications of Ga x...

ACS Applied Materials & Interfaces 2018 / 08

Dopant-induced modifications of Ga x In (1-x) P nanowire-based p-n junctions monolithically integrated on Si (111)

Bologna, Nicolas, Wirths, Stephan, Francaviglia, Luca, Campanini, Marco, Schmid, Heinz, Theofylaktopoulos, Vasileios, Moselund, Kirsten E, Fontcuberta i Morral, Anna, Erni, Rolf, Riel, Heike, Rossell,
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Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.8b10770
Date:
August, 2018
File:
PDF, 1.94 MB
english, 2018
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