VTH Instability of p-GaN Gate HEMTs under Static and...

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IEEE Electron Device Letters 2018

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

He, Jiabei, Tang, Gaofei, Chen, Kevin J.
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2867938
File:
PDF, 1.09 MB
english, 2018
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