Gate Leakage Tunneling Impact on the InAs/GaSb...

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IEEE Transactions on Electron Devices 2018

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

Padilla, Jose L., Medina-Bailon, Cristina, Marquez, Carlos, Sampedro, Carlos, Donetti, Luca, Gamiz, Francisco, Ionescu, Adrian Mihai
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2866123
File:
PDF, 2.31 MB
english, 2018
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