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[IEEE 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2018.4.16-2018.4.19)] 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Device physics, design and challenge of negative capacitance FET
Liang, GengchiauYear:
2018
Language:
english
DOI:
10.1109/VLSI-TSA.2018.8403850
File:
PDF, 43 KB
english, 2018