The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
Sobolev, N. A., Ber, B. Ya., Kazantsev, D. Yu., Kalyadin, A. E., Karabeshkin, K. V., Mikoushkin, V. M., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Sherstnev, E. V., Shmidt, N. M.Volume:
44
Language:
english
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785018070131
Date:
July, 2018
File:
PDF, 462 KB
english, 2018