Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content
Bin, Xu, Xu, Jing-Ping, Liu, Lu, Su, YongVolume:
35
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/35/7/077302
Date:
July, 2018
File:
PDF, 1.74 MB
english, 2018