Sub-1-nm equivalent oxide thickness Al-HfO2 trapping layer...

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ACS Applied Nano Materials 2018 / 08

Sub-1-nm equivalent oxide thickness Al-HfO2 trapping layer with excellent thermal stability and retention for non-volatile memory

Spiga, Sabina, Driussi, Francesco, Congedo, Gabriele, Wiemer, Claudia, Lamperti, Alessio, Cianci, Elena
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Language:
english
Journal:
ACS Applied Nano Materials
DOI:
10.1021/acsanm.8b00918
Date:
August, 2018
File:
PDF, 2.64 MB
english, 2018
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