The Mechanism of Growth of GaN Films by the HVPE Method on...

ECS Journal of Solid State Science and Technology 2018 Vol. 7; Iss. 9

The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates

Kukushkin, S. A., Sharofidinov, Sh. Sh., Osipov, A. V., Redkov, A. V., Kidalov, V. V., Grashchenko, A. S., Soshnikov, I. P., Dydenchuk, A. F.
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Volume:
7
Year:
2018
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0191809jss
File:
PDF, 1.06 MB
english, 2018
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