Fabrication of a p–n Heterojunction Using Topological...

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Journal of Electronic Materials 2018 / 9

Fabrication of a p–n Heterojunction Using Topological Insulator Bi2Te3–Si and Its Annealing Response

Ahmad, Faizan, Singh, Rashmi, Misra, Prasanna Kumar, Kumar, Naresh, Kumar, Rachna, Kumar, Pramod
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Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-018-6609-7
Date:
September, 2018
File:
PDF, 2.23 MB
english, 2018
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